What Does Annealing Do to Metal-Graphene Contacts?

被引:113
作者
Leong, Wei Sun [1 ]
Nai, Chang Tai [2 ]
Thong, John T. L. [1 ]
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117583, Singapore
[2] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
基金
新加坡国家研究基金会;
关键词
Graphene; annealing; contact resistance; resist residues; soft shadow-mask; Raman analysis; RESISTANCE; DEVICES;
D O I
10.1021/nl500999r
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Annealing is a postprocessing treatment commonly used to improve metal-graphene contacts with the assumption that resist residues sandwiched at the metal-graphene contacts are removed during annealing. Here, we examine this assumption by undertaking a systematic study to understand mechanisms that lead to the contact enhancement brought about by annealing. Using a soft shadow-mask, we fabricated residue-free metal-graphene contacts with the same dimensions as lithographically defined metal-graphene contacts on the same graphene flake. Both cases show comparable contact enhancement for nickel-graphene contacts after annealing treatment signifying that removal of resist residues is not the main factor for contact enhancement. It is found instead that carbon dissolves from graphene into the metal at chemisorbed Ni- and Co-graphene interfaces and leads to many end-contacts being formed between the metal and the dangling carbon bonds in the graphene, which contributes to much smaller contact resistance.
引用
收藏
页码:3840 / 3847
页数:8
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