MOSFET nonvolatile memory with a high-density tungsten nanodot floating gate formed by self-assembled nanodot deposition

被引：3

作者：

Pei, Y. ^{[1
]}

Yin, C. ^{[2
]}

Bea, J. C. ^{[2
]}

Kino, H. ^{[2
]}

Fukushima, T. ^{[2
]}

Tanaka, T. ^{[2
]}

Koyanagi, M. ^{[2
]}

机构：

[1] Tohoku Univ, Int Adv Res & Educ Org, Aoba Ku, Sendai, Miyagi 9808578, Japan

[2] Tohoku Univ, Dept Bioengn & Robot, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 04期

关键词：

D O I：

10.1088/0268-1242/24/4/045022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-oxide-semiconductor field-effect transistor (MOSFET) nonvolatile memories with high-density tungsten nanodots (W-NDs) dispersed in silicon nitride as a floating gate were fabricated and characterized. The W-NDs with a high density of similar to 5 x 10(12) cm(-2) and small sizes of 2-3 nm were formed by self-assembled nanodot deposition (SAND). A large memory window of similar to 1.7 V was observed with bi-directional gate voltage sweeping between -10 and +10 V. Considering that there is no hysteresis memory window for the reference sample without W-NDs, this result indicates the charge trapping in W-NDs or related defects. Finally, the program/erase speed and retention characteristics were investigated and discussed in this paper.

引用

页数：4