MOSFET nonvolatile memory with a high-density tungsten nanodot floating gate formed by self-assembled nanodot deposition

被引：3
作者：
Pei, Y. [1 ]
Yin, C. [2 ]
Bea, J. C. [2 ]
Kino, H. [2 ]
Fukushima, T. [2 ]
Tanaka, T. [2 ]
Koyanagi, M. [2 ]
机构：
[1] Tohoku Univ, Int Adv Res & Educ Org, Aoba Ku, Sendai, Miyagi 9808578, Japan
[2] Tohoku Univ, Dept Bioengn & Robot, Aoba Ku, Sendai, Miyagi 9808579, Japan
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 04期
关键词：
D O I：
10.1088/0268-1242/24/4/045022
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Metal-oxide-semiconductor field-effect transistor (MOSFET) nonvolatile memories with high-density tungsten nanodots (W-NDs) dispersed in silicon nitride as a floating gate were fabricated and characterized. The W-NDs with a high density of similar to 5 x 10(12) cm(-2) and small sizes of 2-3 nm were formed by self-assembled nanodot deposition (SAND). A large memory window of similar to 1.7 V was observed with bi-directional gate voltage sweeping between -10 and +10 V. Considering that there is no hysteresis memory window for the reference sample without W-NDs, this result indicates the charge trapping in W-NDs or related defects. Finally, the program/erase speed and retention characteristics were investigated and discussed in this paper.
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页数：4
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共 12 条
  • [1] Formation of stacked Ni silicide nanocrystals for nonvolatile memory application
    Chen, Wei-Ren
    Chang, Ting-Chang
    Liu, Po-Tsun
    Lin, Po-Sun
    Tu, Chun-Hao
    Chang, Chun-Yen
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (11)
  • [2] Retention in metal-oxide-semiconductor structures with two embedded self-aligned Ge-nanocrystal layers
    Duguay, S.
    Burignat, S.
    Kern, P.
    Grob, J. J.
    Souifi, A.
    Slaoui, A.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (08) : 837 - 842
  • [3] Formation of nickel-based nanocrystal monolayers for nonvolatile memory applications
    Jang, Yoo-Sung
    Yoon, Jong-Hwan
    Elliman, Robert G.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (25)
  • [4] SONOS memories with embedded silicon nanocrystals in nitride
    Liu, Mei-Chun
    Chiang, Tsung-Yu
    Kuo, Po-Yi
    Chou, Ming-Hong
    Wu, Yi-Hong
    You, Hsin-Chiang
    Cheng, Ching-Hwa
    Liu, Sheng-Hsien
    Yang, Wen-Luh
    Lei, Tan-Fu
    Chao, Tien-Sheng
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (07)
  • [5] PEI Y, 2008, INT C SOL STAT DEV M, P242
  • [6] Electrical characterization of metal-oxide-semiconductor memory devices with high-density self-assembled tungsten nanodots
    Pei, Yan-Li
    Fukushima, Takafumi
    Tanaka, Tetsu
    Koyanagi, Mitsumasa
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2680 - 2683
  • [7] Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride
    Pei, Yanli
    Nishijima, Masahiko
    Fukushima, Takafumi
    Tanaka, Tetsu
    Koyanagi, Mitsumasa
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (11)
  • [8] Modeling of the programming window distribution in multinanocrystals memories
    Perniola, L
    De Salvo, B
    Ghibaudo, G
    Para, AF
    Pananakakis, G
    Vidal, V
    Baron, T
    Lombardo, SA
    [J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2003, 2 (04) : 277 - 284
  • [9] SALVO BD, 2003, IEEE IEDM, P999
  • [10] Ge nanocrystal metal-oxide-semiconductor transistors with Ge nanocrystals formed by thermal oxidation of poly-Si0.88Ge0.12
    Wu, J. H.
    Li, P. W.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (01) : S89 - S92
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