A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlOx Ferroelectric Film

被引：30

作者：

Zhou, Zuopu ^{[1
]}

Zhou, Jiuren ^{[1
]}

Wang, Xinke ^{[1
]}

Wang, Haibo ^{[1
]}

Sun, Chen ^{[1
]}

Han, Kaizhen ^{[1
]}

Kang, Yuye ^{[1
]}

Zheng, Zijie ^{[1
]}

Ni, Haotian ^{[1
]}

Gong, Xiao ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 12期

关键词：

Capacitance; Capacitors; Nonvolatile memory; Switches; Silicon; Circuit synthesis; Temperature measurement; Ferroelectrics; ferroelectric capacitor; ferroelectric memory; eNVM;

D O I：

10.1109/LED.2020.3035276

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we proposed and experimentally demonstrated a metal-insulator-semiconductor (MIS) ferroelectric capacitor with non-volatile programmable capacitance. By switching the polarization of the Al-doped HfO2 ferroelectric insulator with the external electric field, the depletion width of the semiconductor can be modulated, leading to the continuously adjustable capacitance of the device. Due to the non-volatility of ferroelectricity, the programmed capacitance is stable without the constant DC bias. We also proposed some potential applications of the capacitor in the data storage and circuit design.

引用

页码：1837 / 1840

页数：4

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