The Mechanism of Operation of Lateral and Vertical Organic Field Effect Transistors

被引：39

作者：

Ben-Sasson, Ariel J. ^{[1
]}

Greenman, Michael ^{[1
]}

Roichman, Yohai ^{[1
]}

Tessler, Nir ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, Sara & Moshe Zisapel Nanoelect Ctr, IL-32000 Haifa, Israel

来源：

ISRAEL JOURNAL OF CHEMISTRY | 2014年 / 54卷 / 5-6期

基金：

以色列科学基金会;

关键词：

molecular electronics; organic devices; polymers; transistors; VOFET; THIN-FILM TRANSISTORS; LOW-VOLTAGE; CHARGE-DENSITY; MOBILITY; DIODES; SEMICONDUCTORS; TEMPERATURE; SIMULATION; DEPENDENCE; DISPLAYS;

D O I：

10.1002/ijch.201400040

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this contribution, we describe the working principles of organic field effect transistors. To place it in context, we start with a brief description of some aspects of semiconductor field effect transistors. We then describe the standard structure and properties of laterally aligned field effect transistors and at the end, touch upon some properties of the newly developed vertically stacked field effect transistors.

引用

页码：568 / 585

页数：18

共 74 条

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