Surface defects engineering of BiFeO3 films for improved photoelectrochemical water oxidation

被引:8
作者
Nie, Zhiwei [1 ]
Yan, Xiaoyan [1 ]
Zhang, Boyang [1 ]
Ma, Guijun [1 ]
Yang, Nan [1 ]
机构
[1] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China
关键词
Photoelectrochemical water oxidation; BiFeO3; Surface defects; Nitrogen plasma treatment; TRANSITION-METAL NITRIDES; THIN-FILMS; PHOTOANODES; EFFICIENT; MECHANISMS; STATES; FEOOH; OXIDE;
D O I
10.1016/j.ceramint.2022.08.187
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
As a promising material for photoelectrochemical (PEC) water oxidation, the fast recombination rate and slug-gish surface reaction for BiFeO3 (BFO) still hinder its practical application. In this work, nitrogen plasma was first used to engineer surface defects of the pulsed laser deposition (PLD)-fabricated BFO films to suppress the surface charge recombination and improve the surface water oxidation activity, as well as enhance the stability. A remarkable photocatalytic activity enhancement was observed after the surface modification. Specifically, the photocurrent density is 95 mu A/cm2 at 0.6 V (vs. Ag/AgCl, pH=12.8) for BFO-N (after nitrogen plasma treat-ment), which is about 8 times higher than as-grown BFO (12 mu A/cm2) at the same potential. Meanwhile, the onset potential of BFO-N shifts toward the negative value by 120 mV compared to BFO. Also, the BFO-N reveals superior stability to BFO, which shows nearly no decay after the 1-h test. Complete experimental characterization and deep mechanistic analysis indicate that the enhanced performance could be due to the newly-formed Fe -enriched oxynitride layer on the surface after nitrogen plasma treatment, which suppresses the fast recombi-nation, improves the water oxidation reaction kinetics, and protects the photoanode against photocorrosion. Our work offers a simple, but effective way to improve the PEC performance of BFO, which is instructive for fabri-cating similar high-performance photoelectrodes for PEC applications.
引用
收藏
页码:36279 / 36286
页数:8
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