Effect of Heat Treatment on Structural, Optical and Morphology Properties of Tin-doped ZnO thin film

被引:0
作者
Abdullah, H. [1 ]
Shaari, S. [1 ]
Kadhum, A. Amir [2 ]
Norazia, M. N. [1 ]
机构
[1] Univ Kebangsaan Malaysia, Fac Engn & Built Environm, Dept Elect Elect & Syst Engn, Bangi 43600, Selangor, Malaysia
[2] Univ Kebangsaan Malaysia, Fac Engn & Built Environm, Dept Chem & Process Engn, Bangi 43600, Selangor, Malaysia
来源
PROCEEDINGS OF THE 1ST WSEAS INTERNATIONAL CONFERENCE ON MATERIALS SCIENCE (MATERIALS'08): RECENT ADVANCES IN MATERIALS SCIENCE | 2008年
关键词
zinc oxide; sol-gel method; structural properties; doped Sn; annealing;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The sol-gel method was used to obtain ZnO films doped with Sri at different annealing temperatures, 400 degrees C, 500 degrees C and 600 degrees C. As a starting material, zinc acetate dehydrate was used. 2-methoxyethanol and monoethanolamine were used as the solvent and stabilizer, respectively. The dopant source was tin chloride. The atomic percentage of dopant in solution were Zn1-xSnxO, x = 0 and 5 at.%. The proportion between dopant atoms and Zn atoms are not the same in the film as in solution. In the other cases, the dopant proportion in the film is less than that in the solution. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray (EDX), UV-VIS Spectroscopy and Raman spectroscopy were used to study the structural, surface morphology, optical property of the films and the molecular bonding of the ZnO, respectively. We can conclude that the amount as well as the annealing of temperature modifies the film growth process and by consequence the microstructure and surface morphology as well as its optical properties.
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页码:29 / +
页数:2
相关论文
共 14 条
[1]   ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[2]   Raman spectroscopy study of ZnO-based ceramic films fabricated by novel sol-gel process [J].
Huang, YQ ;
Liu, MD ;
Li, Z ;
Zeng, YK ;
Liu, SB .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 97 (02) :111-116
[3]   Hetero-epitaxial growth of ZnO thin films by atmospheric pressure CVD method [J].
Kashiwaba, Y ;
Katahira, F ;
Haga, K ;
Sekiguchi, T ;
Watanabe, H .
JOURNAL OF CRYSTAL GROWTH, 2000, 221 (221) :431-434
[4]   Transparent conducting ZnO:Al, In and Sn thin films deposited by the sol-gel method [J].
Lee, JH ;
Park, BO .
THIN SOLID FILMS, 2003, 426 (1-2) :94-99
[5]   Recent advances in ZnO materials and devices [J].
Look, DC .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3) :383-387
[6]   Effect of different dopant elements on the properties of ZnO thin films [J].
Nunes, P ;
Fortunato, E ;
Tonello, P ;
Fernandes, FB ;
Vilarinho, P ;
Martins, R .
VACUUM, 2002, 64 (3-4) :281-285
[7]   Performances presented by zinc oxide thin films deposited by r.f. magnetron sputtering [J].
Nunes, P ;
Costa, D ;
Fortunato, E ;
Martins, R .
VACUUM, 2002, 64 (3-4) :293-297
[8]  
PANDEY B, 2008, J MAGNETISM MAGNETIC, DOI DOI 10.1016/JJMMM.2008.07.018
[9]   Growth, structure and optical characterization of high quality ZnO thin films obtained by spray pyrolysis [J].
Paraguay, F ;
Estrada, W ;
Acosta, DR ;
Andrade, E ;
Miki-Yoshida, M .
THIN SOLID FILMS, 1999, 350 (1-2) :192-202
[10]   Substrate effects of ZnO thin films prepared by PLD technique [J].
Shan, FK ;
Shin, BC ;
Jang, SW ;
Yu, YS .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2004, 24 (06) :1015-1018