Electro-Thermal Modeling of Power IGBT Modules by Heat Pipe Systems

被引:0
作者
Driss, Ameni [1 ]
Maalej, Samah [1 ]
Zaghdoudi, Mohamed Chaker [1 ]
机构
[1] INSAT, Lab Mat Mesures & Applicat MMA, Tunis, Tunisia
来源
2017 INTERNATIONAL CONFERENCE ON ENGINEERING & MIS (ICEMIS) | 2017年
关键词
Electronics cooling; Heat pipes; IGBT; Electrothermal modeling; SEMICONDUCTOR-DEVICES; SIMULATION; SPICE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an electro-thermal model of an IGBT with its cooling system. A thermal model based on a Cauer Resistor-Capacitance (RC) thermal network, is developed in order to predict the IGBT junction temperature in transient operation. The thermal resistances and capacitances are obtained by a mathematical transformation that is applied to a model based on the Foster thermal network. An electrical model of the IGBT is also developed, and it takes into account the dependency of the static electrical parameters of the IGBT with the junction temperature. The electro-thermal model is considered in a boost converter applications, and two cooling modes are studied. The first one uses air convection technique, and the second one consists of a heat pipe cooling system of which the heat sink is cooled by cold plates using water circulation. The model predictions show the effectiveness of the heat pipe cooling system for different operating conditions such as the commutation frequency and the duty ratio. It is demonstrated that the heat pipe cooling system limits the junction temperature to low values which remain below the maximum admissible ones.
引用
收藏
页数:7
相关论文
共 24 条
[1]   Choosing a thermal model for electrothermal simulation of power semiconductor devices [J].
Ammous, A ;
Ghedira, S ;
Allard, B ;
Morel, H ;
Renault, D .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 1999, 14 (02) :300-307
[2]   Electrothermal modeling of IGBT's: Application to short-circuit conditions [J].
Ammous, A ;
Ammous, K ;
Morel, H ;
Allard, B ;
Bergogne, D ;
Sellami, F ;
Chante, JP .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2000, 15 (04) :778-790
[3]   IGBT high accuracy behavioral macromodel [J].
Asparuhova, Katya ;
Grigorova, Tsvetana .
2008 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2008, :185-+
[4]   Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions - Comparison with infrared measurements [J].
Avenas, Y. ;
Dupont, L. .
MICROELECTRONICS RELIABILITY, 2012, 52 (11) :2617-2626
[5]   Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters-A Review [J].
Avenas, Yvan ;
Dupont, Laurent ;
Khatir, Zoubir .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2012, 27 (06) :3081-3092
[6]  
Ayadi M., 2010, J MODELLING SIMULATI, V1, P163
[7]  
Azar R, 2002, IEEE IND APPLIC SOC, P2433, DOI 10.1109/IAS.2002.1042786
[8]  
Bazzo J. P., OPTICS LASERS ENG, V50, P99
[9]   Extraction of accurate thermal compact models for fast electro-thermal simulation of IGBT modules in hybrid electric vehicles [J].
Ciappa, M ;
Fichtner, W ;
Kojima, T ;
Yamada, Y ;
Nishibe, Y .
MICROELECTRONICS RELIABILITY, 2005, 45 (9-11) :1694-1699
[10]  
Driss A., 2012, INT REV MODELING SIM, V5, P2473