Structure of sulphur-terminated silicon surfaces

被引：15
作者：
Metzner, H
Hahn, T
Bremer, JH
机构：
[1] II. Physikalisches Institut, Universität Göttingen, D-37073 Göttingen
来源：
SURFACE SCIENCE | 1997年 / 377卷 / 1-3期
关键词：
low energy electron diffraction (LEED); silicon; sulphur; surface structure;
D O I：
10.1016/S0039-6028(96)01356-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A high-temperature process has been developed which allows the termination of the Si(lll) surface with sulphur. The appearance of a new ordered structure of the sulphur adsorbate layer has been confirmed by means of low-energy electron diffraction (LEED), and was found to be a (4 x 4) superstructure. The sulphur termination prevents the formation of the native (7 x 7) reconstruction of the Si(111) surface, and the three-fold symmetry of the ideal bulk-terminated (I x 1) surface is found. Using Auger electron spectroscopy (AES), the sulphur coverage of the ordered surface was determined to be one monolayer. The sulphur termination is also applied to Si(100).
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收藏
页码：71 / 74
页数：4
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