Theoretical study of optical properties in deep ultraviolet Al-rich AlGaN/AIN quantum wells

被引:16
作者
Park, S. H. [1 ]
机构
[1] Catholic Univ Daegu, Dept Elect Engn, Kyeongsan 712702, Kyeongbuk, South Korea
关键词
LIGHT-EMITTING-DIODES; NM EMISSION; GAIN; SEMICONDUCTORS; LASERS;
D O I
10.1088/0268-1242/24/3/035002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Optical properties of deep ultraviolet Al-rich AlGaN/AlN quantum wells (QWs) were theoretically investigated by using the multiband effective-mass theory. The theoretical PL transition wavelength is found to agree well with the experimental result. The internal field in AlGaN/AlN QW structures with lower Al contents is much larger than that in QW structures with higher Al contents. The intensity of the spontaneous emission spectra is shown to be improved with increasing Al content because the optical matrix elements are largely enhanced due to the reduced internal field.
引用
收藏
页数:4
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