Relaxation of nanopatterns on Nb-doped SrTiO3 surface

被引：16
作者：
Li, RW
Kanki, T
Hirooka, M
Takagi, A
Matsumoto, T
Tanaka, H
Kawai, T
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 56700476, Japan
[2] Osaka Univ, Inst Sci & Ind Res, Osaka 56700476, Japan
[3] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama, Japan
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 14期
关键词：
D O I：
10.1063/1.1699478
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By atomic force microscopy (AFM), we have realized nanolithography and changed the physical properties within a desired nanosized region on Nb-doped SrTiO3 single-crystal substrate. Importantly, a considerable relaxation of these written patterns was observed directly, which evidently indicates that a significant chemical transport occurs during and after the AFM lithography. Furthermore, we found that defects introduced by Ar bombardment can stabilize these patterns, which is quite effective for the application of AFM lithography in perovskite oxides. (C) 2004 American Institute of Physics.
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页码：2670 / 2672
页数：3
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