Leakage Current Characteristics of New SrBi4Ti4O15/CaBi4Ti4O15 Thin-Film Capacitor with Excellent Electric Stability

被引：0

作者：

Kawahara, Hideaki ^{[1
]}

Tahara, Naoya ^{[1
]}

Nomura, Shuhei ^{[1
]}

Yamashita, Kaoru ^{[1
]}

Noda, Minoru ^{[1
]}

Uchida, Hiroshi ^{[2
]}

Funakubo, Hiroshi ^{[3
]}

机构：

[1] Kyoto Inst Technol, Grad Sch Sci & Technol, Kyoto 606, Japan

[2] Sophia Univ, Tokyo, Japan

[3] Tokyo Inst Technol, Tokyo 152, Japan

来源：

2013 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK2013) | 2013年

关键词：

component; Bismuth Layered Structure Dielectrics (BLSD); film capacitor; electric stability; leakage current;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SrBi4Ti4O15 (SBTi) and CaBi4Ti4O15 (CBTi) dielectric films of Bismuth Layered Structure Dielectrics (BLSD) are examined as stacked-type dielectric capacitors for realizing excellent electric stability in capacitor device. It is revealed that the leakage current of the SBTi and CBTi is composed mainly from Schottky current for medium electric field range (about 100-350 kV/cm). The current is smaller by three order of magnitude than the BST single perovskite film, even with thinner thickness in the SBTi film. This indicates that the SBTi or CBTi film is effective for applying to high permittivity capacitor with the barium perovskite oxide family.

引用

页数：2