Physics-Based Factorization of Magnetic Tunnel Junctions for Modeling and Circuit Simulation

被引:0
|
作者
Camsari, Kerem Yunus [1 ]
Ganguly, Samiran [1 ]
Datta, Deepanjan [2 ]
Datta, Supriyo [1 ]
机构
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[2] GLOBALFOUNDRIES Singapore, Singapore 738406, Singapore
关键词
SPIN-TRANSFER-TORQUE;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
We present a physics-based factorization of Magnetic Tunnel Junctions (MTJ) in terms of a minimal number of experimentally and theoretically accessible parameters that can be used to optimize existing MTJ designs as well as to probe emerging MTJ devices. Our model fully captures angular/voltage dependence of state-of-the-art MTJs and Spin Valves (SV) and is compatible with existing circuit simulation frameworks such as Verilog-A and SPICE.
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页数:4
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