Thickness dependence of magnetic domains of MnAs films

被引：9
作者：
Manago, T.
Kuramochi, H.
Akinaga, H.
机构：
[1] Natl Inst AIST, SYNAF, NRI, Tsukuba, Ibaraki 3058568, Japan
[2] SII NanoTechnol, Shizuoka 4101393, Japan
来源：
SURFACE SCIENCE | 2006年 / 600卷 / 18期
关键词：
atomic force microscopy; magnetic force microscopy; manganese arsenide; gallium arsenide; metal-semiconductor magnetic thin film structures; PERIODIC ELASTIC DOMAINS; THIN-FILMS; GAAS(001); ORIENTATION; GAAS;
D O I：
10.1016/j.susc.2006.01.137
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We systematically investigated thickness and magnetization variations of the domain structures of MnAs films on GaAs(001) using magnetic force microscopy (MFM) at room temperature. The observed thickness range is from 5 to 500 nm. The magnetic domain structures drastically change with increasing thickness because of the existence of the thickness-dependent periodic ridge-groove structure. The domain structures also depend on the magnetization histories. The MnAs films with the thickness of less than 50 urn have no groove structure and the single magnetic domain is realized at the remanent state. In the thickness more than 100 nm, on the other hand, the groove structures of paramagnetic beta-MnAs appear. The complex magnetic domain structures of MnAs films result from the paramagnetic groove structures, the uniaxial anisotropy and weak perpendicular anisotropy. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：4155 / 4159
页数：5
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