X-ray investigation of the interface structure of free standing InAs nanowires grown on GaAs [(1)over-bar(1)over-bar(1)over-bar]B

被引：0

作者：

Bauer, Jens ^{[1
]}

Pietsch, Ullrich ^{[2
]}

Davydok, Anton ^{[2
]}

Biermanns, Andreas ^{[2
]}

Grenzer, Joerg ^{[3
]}

Gottschalch, Volker ^{[1
]}

Wagner, Gerald ^{[1
]}

机构：

[1] Univ Leipzig, D-04103 Leipzig, Germany

[2] Univ Siegen, D-57068 Siegen, Germany

[3] Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2009年 / 96卷 / 04期

关键词：

MOVPE GROWTH; MECHANISM; WHISKERS; ARRAYS; STRAIN;

D O I：

10.1007/s00339-009-5318-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The heteroepitaxial growth process of InAs nanowires (NW) on GaAs [(1) over bar(1) over bar(1) over bar](B) substrate was investigated by X-ray grazing-incidence diffraction using synchrotron radiation. For crystal growth we applied the vapor-liquid-solid (VLS) growth mechanism via gold seeds. The general sample structure was extracted from various electron microscopic and X-ray diffraction experiments. We found a closed GaxIn1-xAs graduated alloy layer at the substrate to NW interface which was formed in the initial stage of VLS growth with a Au-Ga-In liquid alloy. With ongoing growth time a transition from this VLS layer growth to the conventional VLS NW growth was observed. The structural properties of both VLS grown crystal types were examined. Furthermore, we discuss the VLS layer growth process.

引用

页码：851 / 859

页数：9

共 24 条

[1] MOVPE growth and real structure of vertical-aligned GaAs nanowires [J].