Recent developments in X-ray imaging detectors

被引:79
作者
Moy, JP [1 ]
机构
[1] Trixell, F-38430 Moirans, France
关键词
X-ray imaging; amorphous silicon; pixel; array; scintillator; photoconductor;
D O I
10.1016/S0168-9002(99)01196-1
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The replacement of the radiographic film in medical imaging has been the driving force in X-ray imaging developments. It requires a similar to 40 cm wide detector to cover all examinations, an equivalent noise level of 1-5 X-ray quanta per pixel, and spatial resolution in the range 100-150 mu m. The need for entirely electronic imaging equipments has fostered the development of many X-ray detectors, most of them based on an array of amorphous silicon pixels, which is the only technology capable to achieve such large areas. Essentially, two concepts have been implemented: intermediate conversion of X-rays to light by a scintillator, detected by an array of light sensitive pixels, comprising a photodiode and a switching device, either a TFT or a diode. conversion into electron-hole pairs in a photoconductor, collected by an array of electrodes and switches. In both cases, charge amplifiers read the generated charges line by line. Scintillator and photoconductor-based systems are now close to production. They achieve better image quality than the classic film-screen combination, at lower X-ray dose and with a much broader dynamic range. Dynamic imaging up to 30 frames/s has been demonstrated. The technical challenges at the level of the a-Si array are the number of acceptable defects, the on/off ratio of the switches, the quantum efficiency of the photodiodes, the memory effects associated with traps in a-Si. Of course, long-term reliability is a major concern for medical components. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:26 / 37
页数:12
相关论文
共 26 条
[1]   LARGE-AREA IMAGE SENSING USING AMORPHOUS-SILICON NIP DIODES [J].
BIRD, NC ;
CURLING, CJ ;
VANBERKEL, C .
SENSORS AND ACTUATORS A-PHYSICAL, 1995, 47 (1-3) :444-448
[2]   Radiation damage of amorphous silicon, thin-film, field-effect transistors [J].
Boudry, JM ;
Antonuk, LE .
MEDICAL PHYSICS, 1996, 23 (05) :743-754
[3]  
CALAIS E, 1998, SPIE, V2708, P802
[4]   USE OF MULTIWIRE PROPORTIONAL COUNTERS TO SELECT AND LOCALIZE CHARGED PARTICLES [J].
CHARPAK, G ;
BOUCLIER, R ;
BRESSANI, T ;
FAVIER, J ;
ZUPANCIC, C .
NUCLEAR INSTRUMENTS & METHODS, 1968, 62 (03) :262-&
[5]   New CsI/a-Si 17" x 17" X-ray flat panel detector provides superior detectivity and immediate direct digital output for General Radiography systems [J].
Chaussat, C ;
Chabbal, J ;
Ducourant, T ;
Spinnler, V ;
Vieux, G ;
Neyret, R .
PHYSICS OF MEDICAL IMAGING, 1998, 3336 :45-56
[6]   Characterization of a third generation, multi-mode sensor panel [J].
Colbeth, RE ;
Cooper, VN ;
Gilblom, DL ;
Harris, R ;
Job, ID ;
Klausmeier-Brown, ME ;
Marc, M ;
Pavkovich, J ;
Seppi, EJ ;
Shapiro, EG ;
Wright, MD ;
Yu, JM .
MEDICAL IMAGING 1999: PHYSICS OF MEDICAL IMAGING, PTS 1 AND 2, 1999, 3659 :491-500
[7]  
CRANFORS PR, 1999, SPIE, V3659, P480
[8]   High-resolution amorphous silicon image sensor [J].
Graeve, T ;
Li, YM ;
Fabans, A ;
Huang, WG .
PHYSICS OF MEDICAL IMAGING: MEDICAL IMAGING 1996, 1996, 2708 :494-498
[9]   Dynamic X-ray imaging system based on an amorphous silicon thin-film array [J].
Jung, N ;
Alving, PL ;
Busse, F ;
Conrads, N ;
Meulenbrugge, HM ;
Rutten, W ;
Schiebel, U ;
Weibrecht, M ;
Wieczorek, H .
PHYSICS OF MEDICAL IMAGING, 1998, 3336 :396-407
[10]   Novel large area MIS-type X-ray image sensor for digital radiography [J].
Kameshima, T ;
Kaifu, N ;
Takami, E ;
Morishita, M ;
Yamazaki, T .
PHYSICS OF MEDICAL IMAGING, 1998, 3336 :453-462