Fabrication of Schottky diode based on Zn electrode and polyaniline doped with 2-acrylamido-2-methyl-1-propanesulfonic acid sodium salt

被引：28

作者：

Ebrahim, Shaker Mabrouk ^{[1
]}

机构：

[1] Univ Alexandria, Dept Mat Sci, Inst Grad Studies & Res, Alexandria 21526, Egypt

来源：

JOURNAL OF POLYMER RESEARCH | 2009年 / 16卷 / 05期

关键词：

Conducting polymers; Polyaniline; Schottky diode; Zinc contact; COMPOSITE ORGANIC SEMICONDUCTORS; BARRIER DIODES; ELECTRICAL-PROPERTIES; JUNCTION PROPERTIES; SENSING PROPERTIES; FILMS; CONDUCTIVITY; POLYPYRROLE;

D O I：

10.1007/s10965-008-9251-x

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

The electrical properties, including current-voltage (I-V) and capacitance-voltage (C-V) characteristics, of ITO/polyaniline/Al and ITO/polyaniline/Zn Schottky diodes have been investigated. Polyaniline (PANI) was prepared chemically and doped with 2-acrylamido-2-methyl-1-propanesulfonic acid sodium salt (AMPSNa). The maximum conductivity value for PANI-AMPSNa films was 1.8 x 10(-2) S/cm at 0.5 weight ratio of AMPSNa. The values of various junction parameters such as ideality factor, barrier height and charge carrier concentration were calculated based on the thermionic emission theory. Zn electrode showed better rectifying behavior with PANI-AMPSNa film than Al electrode. The obtained C-V characteristics showed that the charge carrier concentration is in the range of 10(16)/cm(3).

引用

页码：481 / 487

页数：7

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