Interdie Coupling Extraction and Physical Design Optimization for Face-to-Face 3-D ICs

被引:2
作者
Peng, Yarui [1 ]
Petranovic, Dusan [2 ]
Samadi, Kambiz [3 ]
Kamal, Pratyush [3 ]
Du, Yang [4 ]
Lim, Sung Kyu [5 ]
机构
[1] Univ Arkansas, Dept Comp Sci & Comp Engn, Fayetteville, AR 72704 USA
[2] Mentor, Fremont, CA 94538 USA
[3] Qualcomm Res, San Diego, CA 92121 USA
[4] Qualcomm Res, Engn, San Diego, CA 92121 USA
[5] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
关键词
Face-to-face; heterogeneous; 3D IC; parasitic extraction; optimization; CAPACITANCE EXTRACTION; STACKING; DIE;
D O I
10.1109/TNANO.2017.2735361
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Interdie coupling in face-to-face-bonded three-dimensional (3-D) ICs is becoming increasingly important for power and signal integrity. For the first time, we conduct a comprehensive study of the coupling impact in all three aspects: extraction methodology, physical design, and technology scaling. We conduct detailed sensitivity analysis of key parameters using full-chip 3-D IC designs built across multiple technologies from 28 nm down to 7 nm. First, we develop a hierarchy-aware design methodology that reduces the total wirelength by 28.1% and interdie coupling by 27.5%. Second, results show that interdie capacitance significantly affects full-chip timing and noise across multiple technology generations. Specifically, clock delay increases by 18% and skew 16%. Moreover, an additional power distribution network (PDN) layer in the 3-D design further reduces interdie coupling by 66%. Third, interdie coupling remains similar in advanced nodes with die-to-die distance scaling. Finally, our extraction methodology named context creation developed to handle design space exploration for logic-memory stacking reduces extraction error to 0.41% and timing error to 0.16%.
引用
收藏
页码:634 / 644
页数:11
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