Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures

被引：0
|
作者：
Wang, H [1 ]
Wang, HL [1 ]
Feng, SL [1 ]
Zhu, HJ [1 ]
Wang, XD [1 ]
Guo, ZS [1 ]
Ning, D [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
COMPOUND SEMICONDUCTORS 1999 | 2000年 / 166期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Confirmation of quantum dot lasing have been given by photoluminescence and electro-luminescence spectra. Energy levels of QD laser are distinctively resolved due to band filling effect, and the lasing energy of quantum dot laser is much lower than quantum well laser. The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally by deep level transient spectroscopy (DLTS). Such barrier has been predicted by previous theories and can be explained by the apexes appeared in the interface between InAs and GaAs caused by strain.
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页码：251 / 256
页数：6
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