Performance and Radiation Resistance of Quantum Dot Multi-Junction Solar Cells

被引：0

作者：

Richards, B. C. ^{[1
]}

Lin, Yong ^{[1
]}

Patel, Pravin ^{[1
]}

Chumney, Daniel ^{[1
]}

Sharps, Paul R. ^{[1
]}

Kerestes, Chris ^{[1
,2
]}

Forbes, David ^{[2
]}

Driscoll, Kristina ^{[2
]}

Podell, Adam ^{[2
]}

Hubbard, Seth ^{[2
]}

机构：

[1] EMCORE Corp, 10420 Res Rd SE, Albuquerque, NM 87123 USA

[2] Rochester Inst Technol, NanoPower Res Lab, Rochester, NY USA

来源：

2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2013年

关键词：

photovoltaic cells; quantum dots; III-V semiconductor materials;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Lattice matched, triple-junction solar cells with strain-compensated quantum dots (QDs) in the GaAs middle cell were grown by Metal-Organic Chemical Vapor Deposition (MOCVD). Devices with different numbers of QD layers are compared to baseline devices with no QDs. Quantum efficiency and light I-V measurements show an increase in short circuit current density and degradation of the open circuit voltage for QD solar cells. The QDs do not improve the overall efficiency of the devices, and the performance degrades as more QD layers are added. The QD solar cells show improved relative radiation resistance compared to baseline devices, but the improvement is insufficient to make up for the initial loss of performance.

引用

页码：158 / 161

页数：4

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