Active properties of carbon nanotube field-effect transistors deduced from S parameters measurements

被引：24
作者：
Bethoux, Jean-Marc
Happy, Henri
Siligaris, Alexandre
Dambrine, Gilles
Borghetti, J.
Derycke, Vincent
Bourgoin, Jean-Philippe
机构：
[1] Inst Elect Microelect & nanotechnol, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France
[2] CEA Saclay, Serv Phys Etat Condense, CNRS,URA 2464, DSM SRECAM SPEC, F-91191 Gif Sur Yvette, France
来源：
IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2006年 / 5卷 / 04期
关键词：
carbon nanotube field-effect transistor (CNT-FET); device modeling; microwave measurement;
D O I：
10.1109/TNANO.2006.876931
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AC performances of carbon nanotube field-effect transistors (CNT-FETs) are analyzed by means of scattering parameters measurements. The active ac properties of CNT-FETs are clearly demonstrated up to 80 MHz and indications of active behavior are obtained up to 1 GHz. From these measurements, a small signal equivalent circuit is proposed and validated up to 10 MHz. The extraction procedure and the determination of the intrinsic ac elements of CNT-FETs are pointed out.
引用
收藏
页码：335 / 342
页数：8
相关论文
共 16 条
[1]   Field-modulated carrier transport in carbon nanotube transistors [J].
Appenzeller, J ;
Knoch, J ;
Derycke, V ;
Martel, R ;
Wind, S ;
Avouris, P .
PHYSICAL REVIEW LETTERS, 2002, 89 (12) :126801-126801
[2]   Chemical optimization of self-assembled carbon nanotube transistors [J].
Auvray, S ;
Derycke, V ;
Goffman, M ;
Filoramo, A ;
Jost, O ;
Bourgoin, JP .
NANO LETTERS, 2005, 5 (03) :451-455
[3]   AC performance of nanoelectronics: towards a ballistic THz nanotube transistor [J].
Burke, PJ .
SOLID-STATE ELECTRONICS, 2004, 48 (10-11) :1981-1986
[4]   The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors [J].
Chen, ZH ;
Appenzeller, J ;
Knoch, J ;
Lin, YM ;
Avouris, P .
NANO LETTERS, 2005, 5 (07) :1497-1502
[5]   Engineering carbon nanotubes and nanotube circuits using electrical breakdown [J].
Collins, PC ;
Arnold, MS ;
Avouris, P .
SCIENCE, 2001, 292 (5517) :706-709
[6]   Self-assembled switches based on electroactuated multiwalled nanotubes -: art. no. 193107 [J].
Dujardin, E ;
Derycke, V ;
Goffman, MF ;
Lefèvre, R ;
Bourgoin, JP .
APPLIED PHYSICS LETTERS, 2005, 87 (19) :1-3
[7]   Extraordinary mobility in semiconducting carbon nanotubes [J].
Durkop, T ;
Getty, SA ;
Cobas, E ;
Fuhrer, MS .
NANO LETTERS, 2004, 4 (01) :35-39
[8]   High-frequency response in carbon nanotube field-effect transistors [J].
Frank, DJ ;
Appenzeller, J .
IEEE ELECTRON DEVICE LETTERS, 2004, 25 (01) :34-36
[9]   High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors [J].
Huo, X ;
Zhang, M ;
Chan, PCH ;
Liang, Q ;
Tang, ZK .
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :691-694
[10]   Ballistic carbon nanotube field-effect transistors [J].
Javey, A ;
Guo, J ;
Wang, Q ;
Lundstrom, M ;
Dai, HJ .
NATURE, 2003, 424 (6949) :654-657
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