Experimental study of weak antilocalization effects in a two-dimensional system: Anomalous dephasing rate

被引：13

作者：

Gao, K. H. ^{[1
]}

Yu, G. ^{[1
]}

Zhou, Y. M. ^{[1
]}

Zhou, W. Z. ^{[1
]}

Lin, T. ^{[1
]}

Chu, J. H. ^{[1
]}

Dai, N. ^{[1
]}

Austing, D. G. ^{[2
]}

Gu, Y. ^{[3
]}

Zhang, Y. G. ^{[3
]}

机构：

[1] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China

[2] Natl Res Council Canada, Inst Microstruct Sci M50, Ottawa, ON K1A 0R6, Canada

[3] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 08期

关键词：

aluminium compounds; Fermi liquid; gallium arsenide; III-V semiconductors; indium compounds; magnetoresistance; semiconductor heterojunctions; spin-orbit interactions; SPIN-ORBIT INTERACTION; QUANTUM-WELLS; HETEROSTRUCTURES; LOCALIZATION; MAGNETORESISTANCE;

D O I：

10.1103/PhysRevB.79.085310

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The quantum corrections to magnetoconductivity were studied in a high-mobility InGaAs/InAlAs sample with strong spin-orbit coupling. The weak antilocalization-induced drop in conductivity increases with decreasing conductivity. The experiment is well explained by theory. A spin-splitting energy larger than 5 meV obtained by fitting indicates strong spin-orbit coupling. The extracted dephasing rate as a function of temperature can be qualitatively described by modified Fermi-liquid theory with small-energy-transfer processes. Nonetheless, the extracted dephasing rate linearly increases with increasing conductivity, which is in conflict with the Fermi-liquid model.

引用

页数：6

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