Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors

被引：8

作者：

Cheng, Chun-Hu ^{[1
]}

Lin, Ming-Huei ^{[2
]}

Chen, Hsin-Yu ^{[3
]}

Fan, Chia-Chi ^{[2
]}

Liu, Chien ^{[3
]}

Hsu, Hsiao-Hsuan ^{[4
]}

Chang, Chun-Yen ^{[2
]}

机构：

[1] Natl Taiwan Normal Univ, Dept Mechatron Engn, Taipei 10610, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

[4] Natl Taipei Univ Technol, Dept Mat & Mineral Resources Engn, Taipei 10608, Taiwan

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2019年 / 13卷 / 05期

关键词：

ferroelectric; hafnium zirconium oxide; negative capacitance; transistors; FERROELECTRICITY;

D O I：

10.1002/pssr.201800573

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf1-xZrxO2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40mV/decade, a low off-state leakage current of 190fAm(-1), and a large on/off current ratio of >10(7) can be simultaneously achieved in optimized negative capacitance Hf1-xZrxO2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf1-xZrxO2. Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.

引用

页数：5

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