Recombination dynamics in GaInN/GaN quantum wells

被引：14

作者：

Hangleiter, Andreas ^{[1
]}

机构：

[1] Braunschweig Univ Technol, Inst Appl Phys, Mendelssohnstr 2, D-38106 Braunschweig, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2019年 / 34卷 / 07期

关键词：

GaInN; quantum wells; recombination; efficiency; LIGHT-EMITTING-DIODES; MINORITY-CARRIER LIFETIME; BAND AUGER RECOMBINATION; NONRADIATIVE RECOMBINATION; PIEZOELECTRIC FIELDS; EXCITON LOCALIZATION; DISLOCATION DENSITY; POLARIZATION-FIELDS; OPTICAL-PROPERTIES; V-DEFECTS;

D O I：

10.1088/1361-6641/ab2788

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaInN/GaN quantum wells are now at the heart of visible light emitting devices such as light emitting diodes and laser diodes. Radiative recombination of charge carriers provides the basis of light emission, while non-radiative recombination processes constitute unwanted loss mechanisms. In this review, the physics of both radiative and non-radiative recombination processes is discussed in detail, shining light on many peculiar properties of III-nitride quantum wells.

引用

页数：20

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