A Review of CMOS Photodiode Modeling and the Role of the Lateral Photoresponse

被引：12
作者：
Blanco-Filgueira, Beatriz [1 ]
Lopez Martinez, Paula [1 ]
Roldan Aranda, Juan Bautista [2 ]
机构：
[1] Univ Santiago de Compostela, Ctr Invest Tecnol Informac, Santiago De Compostela 15782, Spain
[2] Univ Granada, Dept Elect & Comp Technol, Granada 18071, Spain
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 01期
关键词：
CMOS photodiode; crosstalk; lateral current; modeling; simulation; IMAGE SENSORS; APS PIXEL; CROSSTALK; PHOTODETECTORS; TECHNOLOGY; COLLECTION; SIMULATION; ARRAYS;
D O I：
10.1109/TED.2015.2446204
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The CMOS photodiode is the primary photosensing device used in solid-state image sensors. A review of significant CMOS photodiode models that can be found in the literature in recent years is presented here. We have focused on photocurrent models in one, two, and three dimensions, paying special attention to lateral current components. Lateral collection, particularly for small devices fabricated in deep submicrometer technologies, has been shown to be of utmost importance. Finally, several models to account for crosstalk effects are also described.
引用
收藏
页码：16 / 25
页数：10
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