Silicon doping system at the research reactor FRM II

被引:7
作者
Li, X. [1 ]
Gerstenberg, H. [1 ]
Neuhaus, I. [1 ]
机构
[1] Tech Univ Munich, Forsch Neutronenquelle Heinz Maier Leibnitz FRM 2, D-85747 Garching, Germany
关键词
Silicon doping; NTD; Neutron flux profile;
D O I
10.1016/j.apradiso.2009.02.017
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Silicon doping has being carried out at FRM II since 2 years. During the commissioning of our new reactor, a simple test rig was used to determine the neutron flux profile at the irradiation position and optimise a nickel absorber liner, which is equipped at the irradiation position for vertical smoothing of the neutron flux profile. MCNP-code was used during the design of the liner. The final automatic doping system is designed to allow the irradiation of cylindrical silicon single crystals 500 mm high and up to 200 mm in diameter. Silicon ingots are additionally rotated continuously about their own cylinder axis during irradiation. The neutron flux density is measured online by using self-powered-neutron (SPN) detectors. The necessary doping homogeneity of +/- 5% is achieved. The doping procedure and doping quality of ingots with high target resistivity are also discussed. (C) 2009 Elsevier Ltd. All rights reserved.
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页码:1220 / 1224
页数:5
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