Reactive intercalation and oxidation at the buried graphene-germanium interface

被引:16
作者
Braeuninger-Weimer, Philipp [1 ]
Burton, Oliver [1 ]
Weatherup, Robert S. [2 ,3 ]
Wang, Ruizhi [1 ]
Dudin, Pavel [4 ]
Brennan, Barry [5 ]
Pollard, Andrew J. [5 ]
Bayer, Bernhard C. [6 ,7 ]
Veigang-Radulescu, Vlad P. [1 ]
Meyer, Jannik C. [6 ]
Murdoch, Billy J. [8 ,9 ]
Cumpson, Peter J. [8 ]
Hofmann, Stephan [1 ]
机构
[1] Univ Cambridge, Dept Engn, Cambridge CBS 0FA, England
[2] Univ Manchester Harwell, Diamond Light Source, Harwell Campus, Didcot OX11 0DE, Oxon, England
[3] Univ Manchester, Sch Chem, Oxford Rd, Manchester M13 9PL, Lancs, England
[4] Diamond Light Source, Didcot OX11 0DE, Oxon, England
[5] Natl Phys Lab, Hampton Rd, Teddington TW11 0LW, Middx, England
[6] Univ Vienna, Fac Phys, Boltzmanngasse 5, A-1090 Vienna, Austria
[7] Vienna Univ Technol TU Wien, Inst Mat Chem, Getreidemarkt 9-165, A-1060 Vienna, Austria
[8] Newcastle Univ, Sch Mech & Syst Engn, Natl EPSRC XPS Users Serv NEXUS, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[9] RMIT Univ, Sch Sci, Melbourne, Vic 3001, Australia
基金
欧盟地平线“2020”; 英国工程与自然科学研究理事会;
关键词
EPITAXIAL GRAPHENE; HYDROGEN INTERCALATION; MONOLAYER GRAPHENE; RAMAN-SPECTROSCOPY; CVD GRAPHENE; LARGE-AREA; GROWTH; OXIDE; WETTABILITY; PASSIVATION;
D O I
10.1063/1.5098351
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We explore a number of different electrochemical, wet chemical, and gas phase approaches to study intercalation and oxidation at the buried graphene-Ge interface. While the previous literature focused on the passivation of the Ge surface by chemical vapor deposited graphene, we show that particularly via electrochemical intercalation in a 0.25 N solution of anhydrous sodium acetate in glacial acetic acid, this passivation can be overcome to grow GeO2 under graphene. Angle resolved photoemission spectroscopy, Raman spectroscopy, He ion microscopy, and time-of-flight secondary ion mass spectrometry show that the monolayer graphene remains undamaged and its intrinsic strain is released by the interface oxidation. Graphene acts as a protection layer for the as-grown Ge oxide, and we discuss how these insights can be utilized for new processing approaches.
引用
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页数:8
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