Reactive intercalation and oxidation at the buried graphene-germanium interface

被引：16

作者：

Braeuninger-Weimer, Philipp ^{[1
]}

Burton, Oliver ^{[1
]}

Weatherup, Robert S. ^{[2
,3
]}

Wang, Ruizhi ^{[1
]}

Dudin, Pavel ^{[4
]}

Brennan, Barry ^{[5
]}

Pollard, Andrew J. ^{[5
]}

Bayer, Bernhard C. ^{[6
,7
]}

Veigang-Radulescu, Vlad P. ^{[1
]}

Meyer, Jannik C. ^{[6
]}

Murdoch, Billy J. ^{[8
,9
]}

Cumpson, Peter J. ^{[8
]}

Hofmann, Stephan ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CBS 0FA, England

[2] Univ Manchester Harwell, Diamond Light Source, Harwell Campus, Didcot OX11 0DE, Oxon, England

[3] Univ Manchester, Sch Chem, Oxford Rd, Manchester M13 9PL, Lancs, England

[4] Diamond Light Source, Didcot OX11 0DE, Oxon, England

[5] Natl Phys Lab, Hampton Rd, Teddington TW11 0LW, Middx, England

[6] Univ Vienna, Fac Phys, Boltzmanngasse 5, A-1090 Vienna, Austria

[7] Vienna Univ Technol TU Wien, Inst Mat Chem, Getreidemarkt 9-165, A-1060 Vienna, Austria

[8] Newcastle Univ, Sch Mech & Syst Engn, Natl EPSRC XPS Users Serv NEXUS, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

[9] RMIT Univ, Sch Sci, Melbourne, Vic 3001, Australia

来源：

APL MATERIALS | 2019年 / 7卷 / 07期

基金：

欧盟地平线“2020”; 英国工程与自然科学研究理事会;

关键词：

EPITAXIAL GRAPHENE; HYDROGEN INTERCALATION; MONOLAYER GRAPHENE; RAMAN-SPECTROSCOPY; CVD GRAPHENE; LARGE-AREA; GROWTH; OXIDE; WETTABILITY; PASSIVATION;

D O I：

10.1063/1.5098351

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We explore a number of different electrochemical, wet chemical, and gas phase approaches to study intercalation and oxidation at the buried graphene-Ge interface. While the previous literature focused on the passivation of the Ge surface by chemical vapor deposited graphene, we show that particularly via electrochemical intercalation in a 0.25 N solution of anhydrous sodium acetate in glacial acetic acid, this passivation can be overcome to grow GeO2 under graphene. Angle resolved photoemission spectroscopy, Raman spectroscopy, He ion microscopy, and time-of-flight secondary ion mass spectrometry show that the monolayer graphene remains undamaged and its intrinsic strain is released by the interface oxidation. Graphene acts as a protection layer for the as-grown Ge oxide, and we discuss how these insights can be utilized for new processing approaches.

引用

页数：8

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