High curie temperatures in ferromagnetic Cr-doped AlN thin films

被引:127
作者
Kumar, D
Antifakos, J
Blamire, MG
Barber, ZH
机构
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
[2] Kurukshetra Univ, Dept Elect Sci, Kurukshetra 136119, Haryana, India
关键词
D O I
10.1063/1.1763216
中图分类号
O59 [应用物理学];
学科分类号
摘要
Al1-xCrxN thin films with 0.02less than or equal toxless than or equal to0.1 were deposited by reactive co-sputtering onto c-plane (001) sapphire. Room-temperature ferromagnetism with a coercive field of 85 Oe was observed in samples with chromium contents as low as x=0.027 (2.7%). With increasing Cr content the mean magnetic moment is strongly suppressed, with a maximum saturation moment of 0.62 and 0.71 mu(B) per Cr atom at 300 and 50 K, respectively. We show that the Curie temperature of Al1-xCrxN for x=0.027 is greater than 900 K. (C) 2004 American Institute of Physics.
引用
收藏
页码:5004 / 5006
页数:3
相关论文
共 19 条
  • [1] New materials for spintronics
    Chambers, SA
    Yoo, YK
    [J]. MRS BULLETIN, 2003, 28 (10) : 706 - 708
  • [2] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors
    Dietl, T
    Ohno, H
    Matsukura, F
    Cibert, J
    Ferrand, D
    [J]. SCIENCE, 2000, 287 (5455) : 1019 - 1022
  • [3] FRAZIER R, 2003, APPL PHYS LETT, V82, P3047
  • [4] High temperature (>400 K) ferromagnetism, in III-V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy
    Hashimoto, M
    Zhou, YK
    Kanamura, M
    Asahi, H
    [J]. SOLID STATE COMMUNICATIONS, 2002, 122 (1-2) : 37 - 39
  • [5] High-Tc ferromagnetism in diluted magnetic semiconducting GaN:Mn films
    Hori, H
    Sonoda, S
    Sasaki, T
    Yamamoto, Y
    Shimizu, S
    Suga, K
    Kindo, K
    [J]. PHYSICA B-CONDENSED MATTER, 2002, 324 (1-4) : 142 - 150
  • [6] Study of diluted magnetic semiconductor: Co-doped ZnO
    Lee, HJ
    Jeong, SY
    Cho, CR
    Park, CH
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (21) : 4020 - 4022
  • [7] DILUTED MAGNETIC III-V SEMICONDUCTORS
    MUNEKATA, H
    OHNO, H
    VONMOLNAR, S
    SEGMULLER, A
    CHANG, LL
    ESAKI, L
    [J]. PHYSICAL REVIEW LETTERS, 1989, 63 (17) : 1849 - 1852
  • [8] High temperature ferromagnetism with a giant magnetic moment in transparent Co-doped SnO2-δ -: art. no. 077205
    Ogale, SB
    Choudhary, RJ
    Buban, JP
    Lofland, SE
    Shinde, SR
    Kale, SN
    Kulkarni, VN
    Higgins, J
    Lanci, C
    Simpson, JR
    Browning, ND
    Das Sarma, S
    Drew, HD
    Greene, RL
    Venkatesan, T
    [J]. PHYSICAL REVIEW LETTERS, 2003, 91 (07)
  • [9] (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
    Ohno, H
    Shen, A
    Matsukura, F
    Oiwa, A
    Endo, A
    Katsumoto, S
    Iye, Y
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (03) : 363 - 365
  • [10] Room-temperature ferromagnetism in Cr-doped GaN single crystals
    Park, SE
    Lee, HJ
    Cho, YC
    Jeong, SY
    Cho, CR
    Cho, S
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (22) : 4187 - 4189