Crossover between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

被引:55
作者
Wang, Huichao [1 ,2 ]
Liu, Haiwen [1 ,2 ]
Chang, Cui-Zu [3 ,4 ]
Zuo, Huakun [5 ]
Zhao, Yanfei [1 ,2 ]
Sun, Yi [1 ,2 ]
Xia, Zhengcai [5 ]
He, Ke [2 ,3 ,4 ]
Ma, Xucun [2 ,3 ,4 ]
Xie, X. C. [1 ,2 ]
Xue, Qi-Kun [2 ,3 ]
Wang, Jian [1 ,2 ]
机构
[1] Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
[2] Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China
[3] Tsinghua Univ, Dept Phys, Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[4] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[5] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金;
关键词
TRANSPORT; QUANTUM; MAGNETORESISTANCE; CONDUCTION;
D O I
10.1038/srep05817
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We report transport studies on the 5 nm thick Bi2Se3 topological insulator films which are grown viamolecular beam epitaxy technique. The angle-resolved photoemission spectroscopy data show that the Fermi level of the system lies in the bulk conduction band above the Dirac point, suggesting important contribution of bulk states to the transport results. In particular, the crossover from weak antilocalization to weak localization in the bulk states is observed in the parallel magnetic field measurements up to 50 Tesla. The measured magneto-resistance exhibits interesting anisotropy with respect to the orientation of parallel magnetic field B-// and the current I, signifying intrinsic spin-orbit coupling in the Bi2Se3 films. Our work directly shows the crossover of quantum interference effect in the bulk states from weak antilocalization to weak localization. It presents an important step toward a better understanding of the existing three-dimensional topological insulators and the potential applications of nano-scale topological insulator devices.
引用
收藏
页数:6
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