1/f noise in semiconductor and metal nanocrystal solids

被引：77

作者：

Liu, Heng ^{[1
]}

Lhuillier, Emmanuel ^{[1
]}

Guyot-Sionnest, Philippe ^{[1
]}

机构：

[1] Univ Chicago, James Franck Inst, Chicago, IL 60637 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 15期

关键词：

THIN GOLD-FILMS; QUANTUM DOTS; 1-F NOISE; COLLOIDAL NANOCRYSTALS; FLUCTUATIONS; DEVICES; NANOPARTICLES; TRANSPORT; SILICON; ORIGIN;

D O I：

10.1063/1.4871682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical 1/f noise is measured in thin films of CdSe, CdSe/CdS, ZnO, HgTe quantum dots and Au nanocrystals. The 1/f noise, normalized per nanoparticle, shows no systematic dependence on the nanoparticle material and the coupling material. However, over 10 orders of magnitude, it correlates well with the nearest neighbor conductance suggesting some universal magnitude of the 1/f noise in these granular conductors. In the hopping regime, the main mechanism of 1/f noise is determined to be mobility fluctuated. In the metallic regime obtained with gold nanoparticle films, the noise drops to a similar level as bulk gold films and with a similar temperature dependence. (C) 2014 AIP Publishing LLC.

引用

页数：7

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