DC-voltage-induced thermal shift of bias point in LiNbO3 optical modulators

被引：16

作者：

Nagata, H ^{[1
]}

O'Brien, NF ^{[1
]}

Bosenberg, WR ^{[1
]}

Reiff, GL ^{[1
]}

Voisine, KR ^{[1
]}

机构：

[1] JDS Uniphase Corp, Bloomfield, CT 06002 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 11期

关键词：

LiNbO3 (LN) modulator; reliability;

D O I：

10.1109/LPT.2004.834928

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Increasing thermal shift of a bias point is observed when do voltage is applied to z-cut LiNbO3 (LN) modulators having asymmetric design; whereas, stable thermal shift is observed in symmetric x-cut LN modulators. A growth of the thermal shift depends upon the amplitude, polarity, and duration of the applied voltage and constitutes a new criterion to reliability modeling of LN modulators.

引用

页码：2460 / 2462

页数：3

共 6 条

[1] Bias point thermal shift growth in Z-cut LiNbO3 modulators
Nagata, H
Li, YG
Finch, A
Voisine, KR
IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (06) : 1184 - 1186
[2] Reliability of nonhermetic bias-free LiNbO3 modulators
Nagata, H
Li, YG
Voisine, KR
Bosenberg, WR
IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (11) : 2457 - 2459
[3] DC drift of x-cut LiNbO3 modulators
Nagata, H
Li, YG
Bosenberg, WR
Reiff, GL
IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (10) : 2233 - 2235
[4] DC drift of Z-cut LiNbO3 modulators
Nagata, H
Feke, GD
Li, YG
Rosenberg, WR
IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (07) : 1655 - 1657
[5] Activation energy of dc-drift of x-cut LiNbO3 optical intensity modulators
Nagata, H
IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (04) : 386 - 388
[6] The Transition of Threshold Voltage Shift of Al2O3 /SiN4 AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC
Lee, Ya-Huan
Chang, Kai-Chun
Tai, Mao-Chou
Wang, Yu-Xuan
Lin, Hsin-Ni
Yeh, Yu-Hsuan
Kuo, Hung-Ming
Tsai, Xin-Ying
Lee, Jason
Huang, I-Yu
Chang, Ting-Chang
Sze, Simon
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (03) : 1792 - 1797

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