All Inkjet-Printed Metal-Oxide Thin-Film Transistor Array with Good Stability and Uniformity Using Surface-Energy Patterns

被引：101

作者：

Li, Yuzhi ^{[1
]}

Lan, Linfeng ^{[1
]}

Sun, Sheng ^{[1
]}

Lin, Zhenguo ^{[1
]}

Gao, Peixiong ^{[1
]}

Song, Wei ^{[1
]}

Song, Erlong ^{[1
]}

Zhang, Peng ^{[1
]}

Peng, Junbiao ^{[1
]}

机构：

[1] South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2017年 / 9卷 / 09期

基金：

中国国家自然科学基金;

关键词：

inkjet printing; metal oxide; thin-film transistors; surface-energy patterns; Cytop; LOW-TEMPERATURE; HIGH-RESOLUTION; GATE INSULATOR; MOBILITY; PROFILE; ROUTE;

D O I：

10.1021/acsami.7b00435

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An array of inkjet-printed metal-oxide thin-film transistors (TFTs) is demonstrated for the first time with the assistance of surface-energy patterns prepared by printing pure solvent to etch the ultrathin hydrophobic layer. The surface energy patterns not only restrained the spreading of inks but also provided a facile way to regulate the morphology of metal oxide films without optimizing ink formulation. The fully printed InGaO TFT devices in the array exhibited excellent electron transport characteristics with a maximum mobility of 11.7 cm(2) V-1 s(-1), negligible hysteresis, good uniformity, and good stability under bias stress. The new route lights a general way toward fully inkjet-printed metal-oxide TFT arrays.

引用

页码：8194 / 8200

页数：7

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