A feasibility study of ZnO-based FBAR devices for an ultra-mass-sensitive sensor application

被引：13

作者：

Mai, L ^{[1
]}

Kim, DH ^{[1
]}

Yim, M ^{[1
]}

Yoon, GW ^{[1
]}

机构：

[1] ICU, Taejon 305714, South Korea

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2004年 / 42卷 / 06期

关键词：

FBAR devices; ZnO; resonance characteristics; Q-factor; return loss;

D O I：

10.1002/mop.20351

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a feasibility study of ZnO-based FBAR devices and their fabrications for the ultra-mass-sensitive sensor application. In this work, a considerable shift in the resonance frequency is observed due to the mass-loading effect by a mixture of ink and volatile methanol. A high sensitivity of 0.05 x 10(5) Hz (.) cm(2)/ng is obtained in the FBAR-based device, which is similar to5 orders of magnitude higher than that of 0.057 Hz (.) cm(2)/ng reported in the conventional 5-MHz quartz crystal microbalance. This approach seems useful for the ultra-high-mass resolution chemical sensor or biosensor applications. (C) 2004 Wiley Periodicals, Inc.

引用

页码：505 / 507

页数：3

共 5 条

[1]

AULD BA, 1990, ACOUSTIC FIELDS WAVE, P376

[2] Improvements of resonance characteristics due to thermal annealing of Bragg reflectors in ZnO-based FBAR devices [J].

Kim, DH ;

Yim, M ;

Chai, D ;

Yoon, G .

ELECTRONICS LETTERS, 2003, 39 (13) :962-964

[3] VERWENDUNG VON SCHWINGQUARZEN ZUR WAGUNG DUNNER SCHICHTEN UND ZUR MIKROWAGUNG [J].

SAUERBREY, G .

ZEITSCHRIFT FUR PHYSIK, 1959, 155 (02) :206-222

[4] Fabrication of ZnO-based film bulk acoustic resonator devices using W/SiO2 multilayer reflector [J].

Yoon, GW ;

Park, JD .

ELECTRONICS LETTERS, 2000, 36 (16) :1435-1437

[5]

Zhang H, 2003, PROC IEEE MICR ELECT, P470

← 1 →