Characterization and modeling of advanced SOI materials and devices

被引：0
|
作者：
Allibert, F [1 ]
Pretet, J [1 ]
Ernst, T [1 ]
Jomaah, J [1 ]
Cristoloveanu, S [1 ]
机构：
[1] ENSERG, UMR CNRS, INPG, Lab Phys Composants Semicond, F-38016 Grenoble 1, France
来源：
PROGRESS IN SOI STRUCTURES AND DEVICES OPERATING AT EXTREME CONDITIONS | 2002年 / 58卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：239 / 247
页数：9
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