A simple technique for the separation of bulk and surface recombination parameters in silicon

被引：32

作者：

Gaubas, E ^{[1
]}

Vanhellemont, J ^{[1
]}

机构：

[1] VILNIUS STATE UNIV,DEPT SEMICOND PHYS,LT-2054 VILNIUS,LITHUANIA

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 80卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.363705

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple method for the separation of bulk and surface recombination parameters, based on the simultaneous control of time and amplitude characteristics of carrier concentration decay, is presented. To enhance the precision of the parameter extraction procedure, the amplitude is determined using a wavelength resulting in near surface carrier excitation while the effective lifetime is measured for homogeneous bulk excitation. For the fast interpretation of experimental data, a technique using nomographs of amplitude-decay time correlated dependencies on modulation depth is proposed. (C) 1996 American Institute of Physics.

引用

页码：6293 / 6297

页数：5

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