Effect of Geometry on the Screened Acceptor Binding Energy in a Quantum Wire

被引：0

作者：

Shanthi, R. Vijaya ^{[1
]}

Nithiananthi, P. ^{[1
]}

机构：

[1] Gandhigram Rural Univ, Dept Phys, Gandhigram 624302, Tamil Nadu, India

来源：

SOLID STATE PHYSICS: PROCEEDINGS OF THE 58TH DAE SOLID STATE PHYSICS SYMPOSIUM 2013, PTS A & B | 2014年 / 1591卷

关键词：

Quantum Wire; Acceptor; Heavy hole; Spatial Dielectric screening; Geometry; Hydrogenic impurity; IMPURITY STATES; WELLS; GAAS; SPECTRA;

D O I：

10.1063/1.4872601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of various Geometries G(x, y) of the GaAs/AlxGa1-xAs Quantum wire like G1: (L, L) G(2): (L, L/2) G(3): (L/2, L/4) on the binding energy of an on-center acceptor impurity has been investigated through effective mass approximation using variational technique. The observations were made including the effect of spatial dependent dielectric screening for different concentration of Al, at T=300K. The influence of spatial dielectric screening on different geometries of the wire has been compared and hence the behavior of the acceptor impurity in GaAs/AlxGa1-xAs Quantum wire has been discussed.

引用

页码：358 / 360

页数：3

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