Nucleation-Step Study of Silicon Homoepitaxy for Low-Temperature Fabrication of Si Solar Cells

被引：0

作者：

Mosleh, Aboozar ^{[1
,2
]}

Ghetmiri, Seyed Amir ^{[1
,2
]}

Conley, Benjamin R. ^{[1
]}

Abu-Safe, Husam ^{[5
]}

Waqar, Zafar ^{[3
]}

Benamara, Mourad ^{[4
]}

Yu, Shui-Qing ^{[2
,3
]}

Naseem, Hameed A. ^{[2
,3
]}

机构：

[1] Univ Arkansas, MicroElect Photon Program, Fayetteville, AR 72703 USA

[2] Univ Arkansas, Arkansas GREEN Res Ctr Solar Cells, Fayetteville, AR 72703 USA

[3] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72703 USA

[4] Univ Arkansas, Inst Nano Sci & Engn, Fayetteville, AR 72703 USA

[5] German Jordanian Univ, Sch Natural Resources Engn & Management, Madaba, Jordan

来源：

2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2013年

基金：

美国国家科学基金会;

关键词：

epitaxial layers; crystalline materials; silicon; DEPOSITION; HYDROGEN; DIFFUSION; SI(111); EPITAXY; SI(001); GROWTH; PLASMA; KINETICS; HF;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Smooth nucleation of silicon has been achieved as a critical step in epitaxial growth process using ultra high vacuum chemical vapor deposition system at 250 degrees C. Proper conditions were achieved by studying the effect of key nucleation parameters such as plasma power, hydrogen dilution and deposition temperature. High-resolution transmission electron microscopy has been employed to study rough nucleation condition in order to achieve perfect nucleation step, which resulted in high quality epilayers.

引用

页码：2646 / 2650

页数：5

共 18 条

[1] Anderson G., 1993, MATER RES SOC S P, P241
[2] Effect of hydrogen on adsorbed precursor diffusion kinetics during hydrogenated amorphous silicon deposition
Bray, KR
Gupta, A
Parsons, GN
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (13) : 2356 - 2358
[3] 370-DEGREES-C CLEAN FOR SI-MOLECULAR BEAM EPITAXY USING A HF DIP
EAGLESHAM, DJ
HIGASHI, GS
CERULLO, M
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (06) : 685 - 687
[4] Photochemical attachment of organic monolayers onto H-terminated Si(111): Radical chain propagation observed via STM studies
Eves, BJ
Sun, QY
Lopinski, GP
Zuilhof, H
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2004, 126 (44) : 14318 - 14319
[5] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON
FINCH, RH
QUEISSER, HJ
WASHBURN, J
THOMAS, G
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 406 - &
[6] Ab initio analysis of silyl precursor physisorption and hydrogen abstraction during low temperature silicon deposition
Gupta, A
Yang, H
Parsons, GN
[J]. SURFACE SCIENCE, 2002, 496 (03) : 307 - 317
[7] Spectroscopic investigations of hydrogen termination, oxide coverage, roughness, and surface state density of silicon during native oxidation in air
Henrion, W
Rebien, M
Angermann, H
Röseler, A
[J]. APPLIED SURFACE SCIENCE, 2002, 202 (3-4) : 199 - 205
[8] COMPARISON OF SI(111) SURFACES PREPARED USING AQUEOUS-SOLUTIONS OF NH4F VERSUS HF
HIGASHI, GS
BECKER, RS
CHABAL, YJ
BECKER, AJ
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (15) : 1656 - 1658
[9] Itabashi N., 1990, JPN J APPL PHYS, V29
[10] FORMATION KINETICS AND CONTROL OF MICROCRYSTALLITE IN MU-C-SI-H FROM GLOW-DISCHARGE PLASMA
MATSUDA, A
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 767 - 774

← 1 2 →