Fast optical proximity correction method based on nonlinear compressive sensing

被引:46
作者
Ma, Xu [1 ]
Wang, Zhiqiang [1 ]
Li, Yanqiu [1 ]
Arce, Gonzalo R. [2 ]
Dong, Lisong [3 ]
Garcia-Frias, Javier [2 ]
机构
[1] Beijing Inst Technol, Sch Opt & Photon, Minist Educ China, Key Lab Photoelect Imaging Technol & Syst, Beijing 100081, Peoples R China
[2] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA
[3] Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China
来源
OPTICS EXPRESS | 2018年 / 26卷 / 11期
基金
北京市自然科学基金; 中国国家自然科学基金;
关键词
PHASE-SHIFTING MASKS; INVERSE LITHOGRAPHY; SOURCE OPTIMIZATION; DESIGN; MICROLITHOGRAPHY; BINARY;
D O I
10.1364/OE.26.014479
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Optical proximity correction (OPC) is an extensively used resolution enhancement technique (RET) in optical lithography. To date, the computational efficiency has become a big issue for pixelated OPC techniques due to the increasing complexity of lithographic masks in modern integrated circuits. This paper is the first to apply nonlinear compressive sensing (CS) theory to break through the computational efficiency of gradient-based pixelated OPC methods. The proposed method reduces the dimensionality of the OPC problem by downsampling the layout pattern. Then, a nonlinear cost function is established to guarantee the lithography imaging performance on the downsampled layout. Under the sparsity assumption of the mask, the OPC problem is formulated as an inverse nonlinear CS reconstruction problem. The iterative hard thresholding (IHT) algorithm is then used to solve for the OPC problem. The proposed method proves to improve the computational efficiency of traditional gradient-based OPC methods, while improving the process windows of the lithography systems. Benefiting from the sparse property of the mask patterns, the mask manufacturability can also be improved compared to traditional methods. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:14479 / 14498
页数:20
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