Influence of electron-hole pair excitation on dissociative sticking

被引:13
|
作者
Mengel, SK [1 ]
Billing, GD [1 ]
机构
[1] UNIV COPENHAGEN,HC ORSTED INST,DEPT CHEM,DK-2100 COPENHAGEN O,DENMARK
来源
JOURNAL OF PHYSICAL CHEMISTRY B | 1997年 / 101卷 / 50期
关键词
D O I
10.1021/jp972061y
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using a semiclassical model that treats the phonons and electrons of a metal quantally within a second quantization formalism and the dynamics of the incoming molecule classically, we have calculated the dissociative sticking and energy accommodation as a function of band structure for the electron-hole pair excitation. It is shown that the electronic band structure has some influence on the reactivity, such that the inclusion of this aspect makes the 111 surface more reactive than the 100 surface-in agreement with experimental findings.
引用
收藏
页码:10781 / 10790
页数:10
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