A 3-V 4-GHz nMOS voltage-controlled oscillator with integrated resonator

被引：14

作者：

Soyuer, M ^{[1
]}

Jenkins, KA ^{[1
]}

Burghartz, JN ^{[1
]}

Hulvey, MD ^{[1
]}

机构：

[1] IBM CORP,DIV MICROELECT,ESSEX JCT,VT 05452

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1996年 / 31卷 / 12期

关键词：

D O I：

10.1109/4.545829

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 4-GHz fully-monolithic nMOS voltage-controlled oscillator circuit implemented ire a 0.5-mu m BiCMOS technology is presented, The tuning range is 9% with an on-chip varactor-tuned resonator and a control voltage of 0-3 V. The measured phase noise is -85 dBc/Hz at 100 kHz and -106 dBc/Hz at 1 MHz offset, The circuit draws 8 mA from st 3 V supply including the reference branch bias current. Even with the supply voltage and the variation in control voltage reduced to 2.3 V, the VCO has a tuning range of 8%.

引用

页码：2042 / 2045

页数：4

共 10 条

[1] Integrated RF and microwave components in BiCMOS technology [J].