Cotunneling and one-dimensional localization in individual disordered single-wall carbon nanotubes:: Temperature dependence of the intrinsic resistance

被引:28
作者
Gao, B.
Glattli, D. C.
Placais, B.
Bachtold, A.
机构
[1] Ecole Normale Super, Lab Pierre Aigrain, F-75231 Paris 05, France
[2] CEA Saclay, SPEC, F-91191 Gif Sur Yvette, France
[3] ICN, E-08193 Barcelona, Spain
[4] CSIC, CNM, E-08193 Barcelona, Spain
关键词
D O I
10.1103/PhysRevB.74.085410
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the temperature dependence of the intrinsic resistance of long individual disordered single-wall carbon nanotubes. The resistance grows dramatically as the temperature is reduced, and the functional form is consistent with an activated behavior. These results are described by a Coulomb blockade along a series of quantum dots. We occasionally observe a kink in the activated behavior that reflects the change of the activation energy as the temperature range is changed. This is attributed to charge hopping events between nonadjacent quantum dots, which is possible through cotunneling processes.
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页数:5
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