Cotunneling and one-dimensional localization in individual disordered single-wall carbon nanotubes:: Temperature dependence of the intrinsic resistance
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作者:
Gao, B.
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机构:Ecole Normale Super, Lab Pierre Aigrain, F-75231 Paris 05, France
Gao, B.
Glattli, D. C.
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机构:Ecole Normale Super, Lab Pierre Aigrain, F-75231 Paris 05, France
Glattli, D. C.
Placais, B.
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机构:Ecole Normale Super, Lab Pierre Aigrain, F-75231 Paris 05, France
Placais, B.
Bachtold, A.
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机构:Ecole Normale Super, Lab Pierre Aigrain, F-75231 Paris 05, France
Bachtold, A.
机构:
[1] Ecole Normale Super, Lab Pierre Aigrain, F-75231 Paris 05, France
[2] CEA Saclay, SPEC, F-91191 Gif Sur Yvette, France
We report on the temperature dependence of the intrinsic resistance of long individual disordered single-wall carbon nanotubes. The resistance grows dramatically as the temperature is reduced, and the functional form is consistent with an activated behavior. These results are described by a Coulomb blockade along a series of quantum dots. We occasionally observe a kink in the activated behavior that reflects the change of the activation energy as the temperature range is changed. This is attributed to charge hopping events between nonadjacent quantum dots, which is possible through cotunneling processes.