Progress in Zno-based diluted magnetic semiconductors

被引:33
|
作者
Snure, Michael [1 ]
Kumar, Dhananjay [2 ]
Tiwari, Ashutosh [1 ]
机构
[1] Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA
[2] N Carolina A&T, Dept Mech Engn, Greensboro, NC 27411 USA
关键词
THIN-FILMS; ELECTRONIC-STRUCTURE; FERROMAGNETISM; CO;
D O I
10.1007/s11837-009-0092-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ZnO-based diluted magnetic semiconductors (DMS) have attracted a great deal of research attention and controversy over the past decade. The initial attention was sparked by the prediction of above-room-temperature ferromagnetism in Mn-doped ZnO by T. Dietl. This was followed by a surge of reports of ferromagnetism in thin film transition metal (TM)-doped ZnO. However, reported values of magnetic moments and Curie temperatures were inconsistent, which led to controversy over the origin of the observed ferromagnetism. In this paper we review a number of TM-doped ZnO-based DMS in order to clarify which materials are likely ferromagnetic.
引用
收藏
页码:72 / 75
页数:4
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