Rear surface passivation of ultra-thin CIGS solar cells using atomic layer deposited HfOx

被引：20

作者：

Birant, Gizem ^{[1
,2
,3
]}

Mafalda, Jorge ^{[3
,4
,5
]}

Scaffidi, Romain ^{[3
,4
,6
]}

de Wild, Jessica ^{[1
,2
,3
]}

Buldu, Dilara Gokcen ^{[1
,2
,3
]}

Kohl, Thierry ^{[1
,2
,3
]}

Brammertz, Guy ^{[1
,2
,3
]}

Meuris, Marc ^{[1
,2
,3
]}

Poortmans, Jef ^{[1
,3
,4
,7
]}

Vermang, Bart ^{[1
,2
,3
]}

机构：

[1] Hasselt Univ Partner Solliance, Inst Mat Res IMO, Wetenschapspk 1, B-3590 Diepenbeek, Belgium

[2] IMEC Div IMOMEC Partner Solliance, Wetenschapspk 1, B-3590 Diepenbeek, Belgium

[3] EnergyVille, Thorpk,Poort Genk 8310 & 8320, B-3600 Genk, Belgium

[4] IMEC Partner Solliance, Kapeldreef 75, B-3001 Leuven, Belgium

[5] KTH Royal Inst Technol, S-11428 Stockholm, Sweden

[6] Univ Catholique Louvain UCLouvain, B-1348 Louvain La Neuve, Belgium

[7] Katholieke Univ Leuven, Dept Elect Engn, Kasteelpk Arenberg 10, B-3001 Heverlee, Belgium

来源：

EPJ PHOTOVOLTAICS | 2020年 / 11卷

基金：

欧盟地平线“2020”; 欧洲研究理事会;

关键词：

Solar cells; ultra-thin films; copper indium gallium selenide; surface passivation layer; hafnium oxide; CU(IN;

D O I：

10.1051/epjpv/2020007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, hafnium oxide layer is investigated as rear surface passivation layer for ultra-thin (550 nm) CIGS solar cells. Point contact openings in the passivation layer are realized by spin-coating potassium fluoride prior to absorber layer growth. Contacts are formed during absorber layer growth and visualized with scanning electron microscopy (SEM). To assess the passivating qualities, HfOx was applied in a metal-insulator-semiconductor (MIS) structure, and it demonstrates a low interface trap density in combination with a negative density of charges. Since we used ultra-thin devices that are ideal to probe improvements at the rear, solar cell results indicated improvements in all cell parameters by the addition of 2 nm thick HfOx passivation layer with contact openings.

引用

页数：5

共 17 条

[1] Innovative and industrially viable approach to fabricate AlOx rear passivated ultra-thin Cu(In, Ga)Se2 (CIGS) solar cells [J].