Piezoresistive Characteristics of Single Wall Carbon Nanotube/Polyimide Nanocomposites

被引：75

作者：

Kang, Jin Ho ^{[1
]}

Park, Cheol ^{[1
,2
]}

Scholl, Jonathan A. ^{[3
]}

Brazin, Amy H. ^{[4
]}

Holloway, Nancy M. ^{[5
]}

High, James W. ^{[6
]}

Lowther, Sharon E. ^{[7
]}

Harrison, Joycelyn S. ^{[7
]}

机构：

[1] Natl Inst Aerosp, Hampton, VA 23681 USA

[2] Univ Virginia, Dept Mech & Aerosp Engn, Charlottesville, VA 22904 USA

[3] Princeton Univ, Dept Chem Engn, Princeton, NJ 08544 USA

[4] MIT, Cambridge, MA 02139 USA

[5] NASA, Langley Res Ctr, Fabricat Technol Dev Branch, Elect Applicat Technol Sect, Hampton, VA 23681 USA

[6] NASA, Langley Res Ctr, Elect Syst Branch, Hampton, VA 23681 USA

[7] NASA, Langley Res Ctr, Adv Mat & Proc Branch, Hampton, VA 23681 USA

来源：

JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS | 2009年 / 47卷 / 10期

关键词：

carbon nanotubes; composites; high performance polymers; piezoresistance; polyimides; PIEZOELECTRIC PROPERTIES; NANOTUBES; COMPOSITES; CONDUCTION; DISPERSION; POLYIMIDE; RUBBER; BLACK;

D O I：

10.1002/polb.21705

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

A systematic study of the effect of single wall carbon nanotubes (SWCNTs) on the enhanced piezoresistive sensitivity of polyimide nanocomposites from below to above percolation was accomplished. The maximum piezoresistive stress coefficient (Pi) of 1.52 x 10(-3) MPa-1 was noted at just above the percolation threshold concentration (Phi similar to 0.05 wt %) of SWCNT. This coefficient value exceeds those of metallic piezoresistive materials by two orders of magnitude (4.25 x 10(-5) MPa-1 for aluminum). The high piezoresistive characteristics appear to originate from a change in the intrinsic resistivity of the composite caused by the variation of the tunneling distance between conducting inclusions (SWCNTs) under compression or tension. (C) 2009 Wiley Periodicals, Inc.* J Polym Sci Part B: Polym Phys 47: 994-1003, 2009

引用

页码：994 / 1003

页数：10

共 37 条

[11] Embedded piezoresistive cement-based stress/strain sensor [J].