Thin Ge-Se films as a sensing material for radiation doses

被引：6

作者：

Ailavajhala, Mahesh S. ^{[1
]}

Nichol, Tyler ^{[1
]}

Gonzalez-Velo, Yago ^{[2
]}

Poweleit, Christian D. ^{[3
]}

Barnaby, Hugh J. ^{[2
]}

Kozicki, Michael N. ^{[2
]}

Butt, Darryl P. ^{[4
]}

Mitkova, Maria ^{[1
]}

机构：

[1] Boise State Univ, Dept Elect & Comp Engn, Boise, ID 83725 USA

[2] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[3] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[4] Boise State Univ, Dept Mat Sci & Engn, Boise, ID 83725 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2014年 / 251卷 / 07期

关键词：

chalcogenide glasses; radiation-induced Ag diffusion; radiation-induced effects; PHOTOINDUCED VOLUME CHANGES; IN-SITU MEASUREMENTS; CHALCOGENIDE GLASSES; OPTICAL-PROPERTIES; TRANSITIONS; RIGIDITY; SILVER; RICH;

D O I：

10.1002/pssb.201350188

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This work focuses on the study of Ge rich phases in the Ge-Se chalcogenide glass system. Radiation induced effects particularly related to Ag diffusion in the glasses under the influence of different doses of g radiation are investigated and documented. Raman spectroscopy, X-ray diffraction, energy dispersive X-ray spectroscopy, scanning electron microscopy, and atom force microscopy confirmed the occurrence of radiation-induced Ag diffusion and oxidation of the hosting chalcogenide thin films. This causes Ag surface deposition and structural reorganization of the hosting backbone, and affects the electrical performance of the films. It is suggested that the sensing ability of the thin films can be substantially influenced by the encapsulating the sensing elements to avoid the oxidation of the chalcogenide film. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1347 / 1353

页数：7

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