Studies on hexagonal cadmium selenide thin film deposited by chemical route using ascorbic acid

被引：8
作者：
Hake, S. L. [1 ]
Chate, P. A. [1 ]
Sathe, D. J. [2 ]
Hankare, P. P. [3 ]
Bhuse, V. M. [4 ]
机构：
[1] JSM Coll, Dept Chem, Alibag, MS, India
[2] KITs Engn Coll, Dept Chem, Kolhapur, Maharashtra, India
[3] Shivaji Univ, Dept Chem, Kolhapur 416004, Maharashtra, India
[4] Govt Rajaram Coll, Dept Chem, Kolhapur, Maharashtra, India
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2014年 / 25卷 / 02期
关键词：
OPTICAL-PROPERTIES; CARRIER MULTIPLICATION; LOW-TEMPERATURE; X-RAY; CDSE; GROWTH;
D O I：
10.1007/s10854-013-1650-z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have successfully deposited cadmium selenide (CdSe) thin films by simple dip method using ascorbic acid as complexing agent. Variation of thickness with time and temperature were studied. Deposited samples were characterized by X-ray diffraction, scanning electron microscopy. The absorption, electrical and photoelectrochemical properties are also studied. The X-ray diffraction analysis shows that the film samples are in hexagonal structure. The optical band gap energy was found to be 1.70 eV. Activation energy was found to be 0.447 and 0.034 eV for higher temperature and lower temperature respectively. For CdSe photoelectrode, the open circuit voltage and short circuit current are found to be 267 mV and 175 mA respectively. The calculation shows the fill factor is 28.67 %. The power conversion efficiency is found to be 1.01 %.
引用
收藏
页码：811 / 816
页数：6
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