Germanium Gate PhotoMOSFET Integrated to Silicon Photonics

被引：22

作者：

Going, Ryan W. ^{[1
]}

Loo, Jodi ^{[1
]}

Liu, Tsu-Jae King ^{[1
]}

Wu, Ming C. ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2014年 / 20卷 / 04期

基金：

美国国家科学基金会;

关键词：

Phototransistors; photodetectors; optoelectronic devices; optical waveguide components; optical interconnections; PHOTODETECTOR; RECEIVER;

D O I：

10.1109/JSTQE.2013.2294470

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a novel germanium gated NMOS phototransistor integrated on a silicon photonics platform on silicon-on-insulator (SOI) substrate. The phototransistor is fabricated with a modified NMOS process flow, with germanium which is recrystallized using rapid melt growth during the source/drain activation anneal step. The resulting device, with 1-mu m channel length, and 8-mu m channel width, demonstrates a responsivity of over 18 A/W at 1550 nm with 583 nW of incident light. By increasing the incident power to 912 mu W, the device operates at 2.5 GHz. Miniaturization is expected to improve both responsivity and speed in future devices.

引用

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