Double-level spiral inductors with multiple-via interconnects on GaAs substrates

被引：11

作者：

Yin, WY ^{[1
]}

Pan, SJ

Li, LW

机构：

[1] Natl Univ Singapore, Temasek Labs, Singapore 119260, Singapore

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2004年 / 40卷 / 03期

关键词：

double-level spiral inductors; inductance; multiple vias interconnect; Q factor; resonant frequency;

D O I：

10.1109/TMAG.2004.826912

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report the electromagnetic characteristics of on-chip double-level square spiral inductors. The inductors are unique in that the double-level spirals are interconnected by multiple vias with one air bridge, instead of the usual "single-via-at-center" interconnect. We show that, in spite of a decrease in resonant frequency, inductance as well as Q factor are greatly improved over those of single-level spiral geometries, and this could be due to the enhancement of electromagnetic coupling between double spirals.

引用

页码：1756 / 1758

页数：3

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