Quantum Transport in Magnetic Topological Insulator Thin Films

被引:68
作者
Lu, Hai-Zhou [1 ]
Zhao, An [1 ]
Shen, Shun-Qing [1 ]
机构
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
关键词
DIRAC-FERMION; SURFACE; BI2SE3; FIELD;
D O I
10.1103/PhysRevLett.111.146802
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The experimental observation of the long-sought quantum anomalous Hall effect was recently reported in magnetically doped topological insulator thin films [Chang et al., Science 340, 167 (2013)]. An intriguing observation is a rapid decrease from the quantized plateau in the Hall conductance, accompanied by a peak in the longitudinal conductance as a function of the gate voltage. Here, we present a quantum transport theory with an effective model for magnetic topological insulator thin films. The good agreement between theory and experiment reveals that the measured transport originates from a topologically nontrivial conduction band which, near its band edge, has concentrated Berry curvature and a local maximum in group velocity. The indispensable roles of the broken structure inversion and particle-hole symmetries are also revealed. The results are instructive for future experiments and transport studies based on first-principles calculations.
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页数:5
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